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BU506DF Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BU506DF
Description  Silicon NPN Power Transistors
Download  3 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU506DF Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

  BU506DF Datasheet HTML 1Page - Inchange Semiconductor Company Limited BU506DF Datasheet HTML 2Page - Inchange Semiconductor Company Limited BU506DF Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU506DF
DESCRIPTION
・With TO-220Fa package
・High voltage
・High-speed switching
・With integrated efficiency diode
APPLICATIONS
・Horizontal deflection circuits of colour
TV receivers.
・Line-operated switch-mode applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
5
A
ICM
Collector current (Pulse)
8
A
IB
Base current
3
A
IBM
Base current(peak)
5
A
PT
Total power dissipation
TC=25℃
20
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65-150


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