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BU506DF Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce BU506DF
Description  Silicon NPN Power Transistors
Download  3 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU506DF Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

  BU506DF Datasheet HTML 1Page - Inchange Semiconductor Company Limited BU506DF Datasheet HTML 2Page - Inchange Semiconductor Company Limited BU506DF Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BU506DF
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0,L=25mH
700
V
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=1.33A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=1.33A
1.3
V
hFE-1
DC current gain
IC=0.1A ; VCE=5V
6
13
30
hFE-2
DC current gain
IC=3A ; VCE=5V
2.25
ICES
Collector cut-off current
VCE=rated; VBE=0
Tj=125℃
0.5
1.0
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
200
mA
VF
Diode forward voltage
IF=3A;
1.5
2.2
V
Switching times
ts
Storage time
6.5
μs
tf
Fall time
ICM = 3 A; IB(end) = 1A
LB = 12μH
0.7
μs


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