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BD550 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BD550
Description  isc Silicon NPN Power Transistors
Download  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD550 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BD550
DESCRIPTION
·High Power Dissipation
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 110V(Min)
APPLICATIONS
·Designed for use as either driver or output unit applications
in audio amplifier circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
130
V
VCER
Collector-Emitter Voltage
RBE= 100Ω
130
V
VCEO
Collector-Emitter Voltage
110
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
IB
B
Base Current-Continuous
2
A
PC
Collector Power Dissipation
@TC=25℃
150
W
Tj
Junction Temperature
200
Tstg
Storage Temperature Range
-65~200
isc Website:www.iscsemi.cn


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