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BD550 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce BD550
Description  isc Silicon NPN Power Transistors
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD550 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BD550
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.2A ; IB= 0
110
V
VCER(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.2A ; RBE= 100Ω
130
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.5A
B
2
V
VBE(on)
Base-Emitter On Voltage
IC= 4A ;VCE= 4V
1.75
V
ICER
Collector Cutoff Current
VCE= 110V; RBE= 100Ω
1
mA
ICEO
Collector Cutoff Current
VCE= 95V; IB= 0
B
5
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1
mA
hFE
DC Current Gain
IC= 4A ; VCE= 4V
15
75
fT
Current Gain-Bandwidth Product
IC= 0.2A ; VCE= 10V
5
MHz
isc Website:www.iscsemi.cn


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