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MJ11029 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJ11029 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon PNP Darlington Power Transistor MJ11029 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to Type MJ11028 APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continunous -50 A ICM Collector Current-Peak -100 A IB Base Current-Continunous -2 A PC Collector Power Dissipation @TC=25℃ 300 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature Range -55~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.584 ℃/W |
Numéro de pièce similaire - MJ11029 |
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Description similaire - MJ11029 |
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