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BU508DW Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BU508DW
Description  Silicon NPN Power Transistors
Download  3 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU508DW Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

  BU508DW Datasheet HTML 1Page - Inchange Semiconductor Company Limited BU508DW Datasheet HTML 2Page - Inchange Semiconductor Company Limited BU508DW Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU508DW
DESCRIPTION
・With TO-247 package
・High voltage,high speed
・With integrated efficiency diode
APPLICATIONS
・For use in horizontal deflection circuits of
colour TV receivers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
IC
Collector current (DC)
8
A
ICP
Collector current (Pulse)
15
A
IB
Base current (DC)
4
A
IBM
Base current (Pulse)
6
A
Ptot
Total power dissipation
TC=25℃
125
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150


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