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BU508DW Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce BU508DW
Description  Silicon NPN Power Transistors
Download  3 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU508DW Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

  BU508DW Datasheet HTML 1Page - Inchange Semiconductor Company Limited BU508DW Datasheet HTML 2Page - Inchange Semiconductor Company Limited BU508DW Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BU508DW
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
700
V
VCE(sat)
Collector-emitter saturation voltage
IC=4.5A ;IB=1.6A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=4.5A ;IB=2A
1.1
V
ICES
Collector cut-off current
VCE=1500V, VBE=0
Tj=125℃
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=5.0V; IC=0
300
mA
hFE
DC current gain
IC=500mA ; VCE=5V
10
30
VF
Diode forward voltage
IF=4.5A
1.6
2.0
V
fT
Transition frequency
IE=0.1A ; VCE=5V
7
MHz
CC
Collector capacitance
VCB=10V;IE=0;f=1.0MHz
125
pF


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