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BDW23C Datasheet(Fiches technique) 2 Page - Inchange Semiconductor Company Limited

Numéro de pièce BDW23C
Description  isc Silicon NPN Darlington Power Transistor
Télécharger  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDW23C Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BDW23C Datenblatt HTML 1Page - Inchange Semiconductor Company Limited BDW23C Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDW23/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BDW23
45
BDW23A
60
BDW23B
80
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDW23C
IC= 100mA ;IB=0
100
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 2A; IB= 8mA
B
2
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 6A; IB= 60mA
B
3
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 2A; IB= 8mA
B
2.5
V
VBE(on)-1
Base-Emitter On Voltage
IC= 1A ; VCE= 3V
2.5
V
VBE(on)-2
Base-Emitter On Voltage
IC= 6A ; VCE= 3V
3
V
VECF
C-E Diode Forward Voltage
IF= 2A
1.8
V
BDW23
VCE= 22V; IB= 0
B
BDW23A
VCE= 30V; IB= 0
B
BDW23B
VCE= 40V; IB= 0
B
ICEO
Collector
Cutoff Current
BDW23C
VCE= 50V; IB= 0
B
0.5
mA
BDW23
VCB= 45V;IE= 0
BDW23A
VCB= 60V;IE= 0
BDW23B
VCB= 80V;IE= 0
ICBO
Collector
Cutoff Current
BDW23C
VCB= 100V;IE= 0
0.2
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
2
mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 3V
1000
hFE-2
DC Current Gain
IC= 2A ; VCE= 3V
750
20000
hFE-3
DC Current Gain
IC= 6A ; VCE= 3V
100
isc Website:www.iscsemi.cn
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