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2SJ288 Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

No de pièce 2SJ288
Description  P-Channel MOS Silicon FET
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Fabricant  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Site Internet  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SJ288 Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SJ288 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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background image
SMD Type
MOSFET
1
www.kexin.com.cn
1.80+0.1
-0.1
4.50+0.1
-0.1
0.53+0.1
-0.1
0.48+0.1
-0.1
1.50+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
SOT-89
Unit: mm
1. Base
2. Collector
3. Emiitter
1. Source
2. Drain
3. Gate
1
2
3
1Gate
2Drain
3Source
P-Channel MOS Silicon FET
2SJ288
Features
Low on resistance
Very high-speed switching
Low-voltage drive
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Draintosourcevoltage VGS=0
VDSS
-60
V
Gate to source voltage
VDS=0
VGSS
15
V
Drain current (DC)
ID
-500
m A
Drain current(pulse) *
ID
-2
A
Power dissipation
PD
3.5
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
*PW
10
s; d
1%.
Marking
Marking
JE
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Drain cut-off current
IDSS
VDS=-60V,VGS=0
-100
A
Gate leakage current
IGSS
VGS=
12V,VDS=0
10
A
Gate cut-off voltage
VGS(off)
VDS=-10V,ID=-1mA
-1.0
-2.0
V
Forward transfer admittance
Yfs
VDS=-10V,ID=-250mA
240
400
ms
VGS=-10V,ID=-250mA
2.2
3.0
VGS=-4V,ID=-250mA
3.0
4.0
Input capacitance
Ciss
45
pF
Output capacitance
Coss
20
pF
Reverse transfer capacitance
Crss
5pF
Turn-on delay time
td(on)
7ns
Rise time
tr
10
ns
Turn-off delay time
td(off)
35
ns
Fall time
tf
20
ns
VDS=-20V,VGS=0,f=1MHZ
VDD=-30V,ID=--250mA RL=120
Drain to source on-state resistance
RDS(on)


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