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2SK3402 Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SK3402 Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type IC www.kexin.com.cn 1 MOSFET SMD Type 2.3 0.60+0.1 -0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4.60+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 0.127 max TO-252 Unit: mm 1Gate 2Drain 3Source MOS Field Effect Transistor 2SK3402 Features Low on-resistance RDS(on)1 =15 m MAX. (VGS =10V, ID = 18A) RDS(on)2 =22m MAX. (VGS =4.0 V, ID = 18A) Low Ciss :Ciss = 3200 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V ID 36 A Idp * 144 A Power dissipation TC=25 40 TA=25 1.0 Channel temperature Tch 150 Storage temperature Tstg -55to+150 *PW 10 s,Duty Cycle 1% Drain current PD W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=60V,VGS=0 10 A Gate leakage current IGSS VGS= 20V,VDS=0 10 A Gat cutoff voltage VGS(off) VDS=10V,ID=1mA 1.5 2.0 2.5 V Forward transfer admittance Yfs VDS=10V,ID=18A 13 27 S RDS(on)1 VGS=10V,ID=18A 12 15 m RDS(on)2 VGS=4.0V,ID=18A 15 22 m Input capacitance Ciss 3200 pF Output capacitance Coss 520 pF Reverse transfer capacitance Crss 270 pF Turn-on delay time ton 36 ns Rise time tr 310 ns Turn-off delay time toff 170 ns Fall time tf 180 ns Total Gate Charge QG 61 nC Gate to Source Charge QGS 8.2 nC Gate to Drain Charge QGD 17 nC VDS=10V,VGS=0,f=1MHZ ID=18A,VGS(on)=10V,RG=10 ,VDD=30V Draintosourceon-stateresistance ID =36A, VDD =48V, VGS =10V |
Numéro de pièce similaire - 2SK3402 |
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Description similaire - 2SK3402 |
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