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2SK3022 Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

No de pièce 2SK3022
Description  Silicon N-Channel Power F-MOSFET
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Fabricant  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Site Internet  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SK3022 Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SK3022 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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background image
SMD Type
IC
www.kexin.com.cn
1
MOSFET
SMD Type
2.3
0.60+0.1
-0.1
6.50+0.15
-0.15
0.80+0.1
-0.1
4.60+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.127
max
TO-252
Unit: mm
1Gate
2Drain
3Source
Silicon N-Channel Power F-MOSFET
2SK3022
Features
Avalanche energy capacity guaranteed
High-speed switching
Low ON-resistance
No secondary breakdown
Low-voltage drive
High electrostatic breakdown voltage
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
20
V
ID
5
A
Idp *
10
A
Power dissipation
TC=25
10
TA=25
1
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150
*PW
10
s,Duty Cycle
1%
Drain current
PD
W
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Drain to source breakdown voltage
VDSS
ID=1mA,VGS=0
60
V
Drain cut-off current
IDSS
VDS=40V,VGS=0
10
A
Gate leakage current
IGSS
VGS=
20V,VDS=0
10
A
Gate threshold voltage
Vth
VDS=10V,ID=1mA
1
2.5
V
Forward transfer admittance
Yfs
VDS=10V,ID=3A
2
4
S
VGS=10V,ID=3A
90
135
m
VGS=4V,ID=3A
130
200
m
Input capacitance
Ciss
220
pF
Output capacitance
Coss
90
pF
Reverse transfer capacitance
Crss
50
pF
Turn-on delay time
ton
15
ns
Rise time
tr
30
ns
Turn-off delay time
toff
170
ns
Fall time
tf
550
ns
VDS=10V,VGS=0,f=1MHZ
ID=3A,VGS(on)=10V,RL=10
,VDD=30V
Drain to source on-state resistance
RDS(on)


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