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BAY80 Datasheet(Fiches technique) 2 Page - Vishay Siliconix

Numéro de pièce BAY80
Description  Silicon Epitaxial Planar Diode
Télécharger  4 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
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BAY80
Vishay Telefunken
Rev. 2, 01-Apr-99
2 (4)
www.vishay.de
• FaxBack +1-408-970-5600
Document Number 85553
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
IF=0.1mA
VF
0.4
0.52
V
g
IF=10 mA
VF
0.63
0.78
V
IF=50 mA
VF
0.73
0.92
V
IF=100mA
VF
0.78
1
V
IF=150mA
VF
1.07
V
Reverse current
VR=120V
IR
100
nA
VR=120 V, Tj=150°C
IR
100
mA
Breakdown voltage
IR=100mA, tp/T=0.01,
tp=0.3ms
V(BR)
150
V
Diode capacitance
VR=0, f=1MHz
CD
1.5
5
pF
Differential forward resistance
IF=10mA
rf
5
W
Reverse recovery time
IF=IR=30mA, iR=3mA,
RL=100W
trr
50
ns
Characteristics (Tj = 25_C unless otherwise specified)
0
40
80
120
160
0.01
0.1
1
10
1000
Tj – Junction Temperature ( °C )
200
94 9084
100
Scattering Limit
VR =VRRM
Figure 1. Reverse Current vs. Junction Temperature
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
VF – Forward Voltage ( V )
2.0
94 9085
Scattering Limit
Tj =25°C
Figure 2. Forward Current vs. Forward Voltage




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