4N35GV datasheet(4/9 Pages) VISHAY

No de pièce	4N35GV

Description	Optocoupler with Phototransistor Output

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Fabricant	VISHAY [Vishay Siliconix]

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4N25(G)V/ 4N35(G)V Series

Vishay Telefunken

Rev. A4, 11–Jan–99

89

Maximum Safety Ratings (according to VDE 0884) see figure 1

This device is used for protective separation against electrical shock only within the maximum safety ratings.

This must be ensured by using protective circuits in the applications.

Input (Emitter)

Parameters

Test Conditions

Symbol

Value

Unit

Forward current

Isi

130

mA

Output (Detector)

Parameters

Test Conditions

Symbol

Value

Unit

Power dissipation

Tamb ≤ 25°C

Psi

265

mW

Coupler

Parameters

Test Conditions

Symbol

Value

Unit

Rated impulse voltage

VIOTM

6

kV

Safety temperature

Tsi

150

Insulation Rated Parameters (according to VDE 0884)

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Partial discharge test voltage –

Routine test

100%, ttest = 1 s

Vpd

1.6

kV

Partial discharge test voltage – tTr = 60 s, ttest = 10 s,

VIOTM

6

kV

gg

Lot test (sample test)

Tr

test

(see figure 2)

Vpd

1.3

kV

Insulation resistance

VIO = 500 V

RIO

1012

W

VIO = 500 V,

Tamb = 100°C

RIO

1011

W

VIO = 500 V,

Tamb = 150°C

(construction test only)

RIO

109

W

0

25

50

75

125

0

50

100

150

200

300

Tsi – Safety Temperature ( °C )

150

94 9182

100

250

Phototransistor

Psi ( mW )

IR-Diode

Isi ( mA )

Figure 1. Derating diagram

V

IOTM

V

Pd

V

IOWM

V

IORM

V

t

4

t

3

t

test

t

stres

t

2

t

1

t

0

13930

t

Tr

= 60 s

t

1

, t

2

= 1 to 10 s

t

3

, t

4

= 1 s

t

test

= 10 s

t

stres

= 12 s

Figure 2. Test pulse diagram for sample test according to

DIN VDE 0884

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