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2SD1000 Datasheet(Fiches technique) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Numéro de pièce 2SD1000
Description  NPN Silicon Epitaxial Transistor
Télécharger  1 Pages
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Fabricant  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Site Internet  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SD1000 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SD1000 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
Transistors
1
www.kexin.com.cn
NPN Silicon Epitaxial Transistor
2SD1000
Features
World standard miniature package:SOT-89.
Low collector saturation voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5V
Collector current (DC)
IC
0.7
A
Collector Current (pulse) *
IC
1.0
A
Total power dissipation
PT
2.0
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Pulse Test PW
10ms, Duty Cycle
50%.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB =60V, IE = 0 A
100
nA
Emitter cutoff current
IEBO
VEB =5.0 V, IC = 0 A
100
nA
VCE =1.0 V, IC = 100 mA
90
200
400
VCE =1.0 V, IC = 500 mA
50
150
Collector saturation voltage *
VCE(sat) IC = 500 mA, IB = 50 mA
0.12
0.4
V
Base saturation voltage *
VBE(sat) IC = 500 mA, IB =50mA
0.9
1.2
V
Base-emitter voltage *
VBE
VCE =6.0 V, IC = 10 mA
600
635
700
mV
Gain bandwidth product
fT
VCE =6.0 V, IE = -10 mA
110
MHz
Output capacitance
Cob
VCB =6V, IE = 0, f = 1.0 MHz
13
pF
* Pulsed: PW
350 ìs, duty cycle
2%
hFE
DC current gain *
hFE Classification
Marking
LM
LL
LK
hFE
90
180
135
270
200
400


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