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FDN5630 Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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FDN5630 Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type www.kexin.com.cn 1 MOSFET N-Channel MOSFET FDN5630 (KDN5630) ■ Features ● VDS (V) = 60V ● ID = 1.7 A (VGS = 10V) ● RDS(ON) < 100mΩ (VGS = 10V) ● RDS(ON) < 120mΩ (VGS = 6V) 1. Gate 2. Source 3. Drain G S D ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (Note.1) ID 1.7 Pulsed Drain Current IDM 10 Power Dissipation (Note.1) 0.5 (Note.2) 0.46 Thermal Resistance.Junction- to-Ambient (Note.1) RthJA 250 Thermal Resistance.Junction- to-Case RthJC 75 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 PD W ℃ /W ℃ V A Note.1: 250°C/W when mounted on a 0.02 in Pad of 2 oz. Cu. Note.2: 270°C/W when mounted on a minimum pad. 2 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1 2 3 Unit: mm SOT-23 0.1 +0.05 -0.01 |
Numéro de pièce similaire - FDN5630 |
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Description similaire - FDN5630 |
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