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2SC3707 Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

No de pièce 2SC3707
Description  Silicon NPN Epitaxial Planar type
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Fabricant  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Site Internet  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SC3707 Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SC3707 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
Silicon NPN Epitaxial Planar type
2SC3707
Features
Possible with the small current and low voltage
High transition frequency fT
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
10
V
Collector-emitter voltage
VCEO
7V
Emitter-base voltage
VEBO
2V
Collector current
IC
10
mA
Collector power dissipation
PC
50
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
Marking
Marking
2X
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB =10V, IE =0
1
ìA
Emitter cutoff current
IEBO
VEB =1.5 V, IC =0
1
ìA
Forward current transfer ratio
hFE
VCE =1V, IC =1mA
50
150
Transition frequency
fT
VCE =1V, IC = 1 mA, f = 0.8 GHz
4
GHz
Collector output capacitance
Cob
VCB =1V, IE = 0,f= 1 MHz
0.4
pF
Forward transfer gain
|S21e|
2
VCE =1V, IC = 1 mA,f= 0.8 GHz
6.0
dB
Maximum unilateral power gain
GUM
VCE =1V, IC = 1 mA, f = 0.8 GHz
15
dB
Noise figure
NF
VCE =1V, IC = 1 mA,f= 0.8 GHz
3.5
dB


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