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2PA1576 Datasheet(Fiches technique) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Numéro de pièce 2PA1576
Description  PNP General Purpose Transistor
Télécharger  1 Pages
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Fabricant  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Site Internet  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2PA1576 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2PA1576 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
PNP General Purpose Transistor
2PA1576
Features
Low current (max. 100 mA)
Low voltage (max. 40 V).
Low collector capacitance (typ. 2.5 pF).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-40
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-100
mA
Peak collector current
ICM
-200
mA
Peak base current
IBM
-200
mA
Total power dissipation
Ptot
200
mW
Storage temperature
Tstg
-65to+150
Junction temperature
Tj
150
Operating ambient temperature
Tamb
-65to+150
thermal resistance from junction to ambient
Rth j-a
625
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
IE =0; VCB = -30 V
-100
nA
IE =0; VCB =-30 V; Tj = 150
-5
A
Emitter cut-off current
IEBO
IC =0; VEB = -4 V
-100
nA
DC current gain
2PA1576Q
2PA1576R
2PA1576S
hFE
IC =-1mA; VCE =-6V
120
180
270
270
390
560
Collector-emitter saturation voltage
VCE(sat) IC =-50 mA; IB = -5 mA; *
-500
mV
Collector capacitance
Cc
IE =ie=0; VCB = -12 V; f = 1 MHz
2.5
3.5
pF
Transition frequency
fT
IC =-2mA; VCE = -12 V; f = 100 MHz
100
MHz
* Pulse test: tp
300 s;
0.02.
ICBO
Collector cut-off current
hFE Classification
TYPE
2PA1576Q
2PA1576R
2PA1576S
Marking
FQ
FR
FS


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