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2SD2028 Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

No de pièce 2SD2028
Description  NPN Epitaxial Planar Silicon Transistor
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Fabricant  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Site Internet  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SD2028 Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SD2028 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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background image
SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
NPN Epitaxial Planar Silicon Transistor
2SD2028
Features
With Zener diode (11±3V) between collector and base.
Large current capacity.
Low collector-to-emitter saturation voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage, With Zener diode (11±3V)
VCBO
8V
Collector-emitter voltage, With Zener diode (11±3V)
VCEO
8V
Emitter-base voltage
VEBO
5V
Collector current
IC
0.7
A
Collector current (pulse)
ICP
1.5
A
Collector dissipation
PC
200
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
IcBO
VCB =6V , IE = 0
100
nA
Emitter cutoff current
IEBO
VEB =4V , IC = 0
100
nA
DC current Gain
hFE
VCE =2V , IC = 50mA
200
900
Gain bandwidth product
fT
VCE =2V , IC = 50mA
200
MHz
Output capacitance
Cob
VCB = 5V , f = 1MHz
12
pF
Collector-emitter saturation voltage
VCE(sat) IC = 100mA , IB = 10mA
50
120
mV
Base-emitter saturation voltage
VBE(sat) IC = 100mA , IB = 10mA
0.8
1.2
V
Collector-to-base breakdown voltage
V(BR)CBO IC = 100ìA , IE =0
8
11
14
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = 100ìA , RBE =
811
14
V
Emitter-to-base breakdown voltage
V(BR)EBO IE = 10ìA , IC =0
5
V
hFE Classification
Marking
Rank
6
7
8
hFE
200 400
300 600
450 900
LT


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