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TC429MJA Fiches technique(PDF) 2 Page - TelCom Semiconductor, Inc |
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TC429MJA Fiches technique(HTML) 2 Page - TelCom Semiconductor, Inc |
2 / 7 page 4-176 TELCOM SEMICONDUCTOR, INC. ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................... +20V Input Voltage, Any Terminal ..... VDD +0.3V to GND – 0.3V Power Dissipation (TA ≤ 70°C) Plastic DIP ...................................................... 730mW CerDIP ............................................................ 800mW Derating Factors Plastic DIP ............................ 5.6 mW/ °C Above 36°C CerDIP ...................................................... 6.4 mW/ °C Operating Temperature Range C Version ............................................... 0 °C to +70°C I Version ........................................... – 25 °C to +85°C E Version .......................................... – 40 °C to +85°C M Version ....................................... – 55 °C to +125°C ELECTRICAL CHARACTERISTICS: TA = +25°C with 7V ≤ VDD ≤ 18V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit Input VIH Logic 1, High Input Voltage 2.4 1.8 — V VIL Logic 0, Low Input Voltage — 1.3 0.8 V IIN Input Current 0V ≤ V IN ≤ V DD – 10 — 10 µA Output VOH High Output Voltage VDD – 0.025 — — V VOL Low Output Voltage — — 0.025 V RO Output Resistance VIN = 0.8V, — 1.8 2.5 Ω IOUT = 10mA, VDD = 18V VIN = 2.4V, — 1.5 2.5 IOUT = 10mA, VDD = 18V IPK Peak Output Current VDD = 18V (See Figure 3) — 6 — A Switching Time (Note 1) tR Rise Time Figure 1, CL = 2500pF — 23 35 nsec tF Fall Time Figure 1, CL = 2500pF — 25 35 nsec tD1 Delay Time Figure 1 — 53 75 nsec tD2 Delay Time Figure 1 — 60 75 nsec Power Supply IS Power Supply Current VIN = 3V — 3.5 5 mA VIN = 0V — 0.3 0.5 NOTES: 1. Switching times guaranteed by design. Maximum Chip Temperature ................................. +150 °C Storage Temperature Range ................ – 65 °C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300 °C *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. TC429 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER |
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