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TC429MJA Fiches technique(PDF) 2 Page - TelCom Semiconductor, Inc

No de pièce TC429MJA
Description  6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER
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Fabricant  TELCOM [TelCom Semiconductor, Inc]
Site Internet  http://www.telcom-semi.com
Logo TELCOM - TelCom Semiconductor, Inc

TC429MJA Fiches technique(HTML) 2 Page - TelCom Semiconductor, Inc

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TELCOM SEMICONDUCTOR, INC.
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, Any Terminal ..... VDD +0.3V to GND – 0.3V
Power Dissipation (TA ≤ 70°C)
Plastic DIP ...................................................... 730mW
CerDIP ............................................................ 800mW
Derating Factors
Plastic DIP ............................ 5.6 mW/
°C Above 36°C
CerDIP ...................................................... 6.4 mW/
°C
Operating Temperature Range
C Version ............................................... 0
°C to +70°C
I Version ........................................... – 25
°C to +85°C
E Version .......................................... – 40
°C to +85°C
M Version ....................................... – 55
°C to +125°C
ELECTRICAL CHARACTERISTICS:
TA = +25°C with 7V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1, High Input Voltage
2.4
1.8
V
VIL
Logic 0, Low Input Voltage
1.3
0.8
V
IIN
Input Current
0V
V
IN
V
DD
– 10
10
µA
Output
VOH
High Output Voltage
VDD – 0.025
V
VOL
Low Output Voltage
0.025
V
RO
Output Resistance
VIN = 0.8V,
1.8
2.5
IOUT = 10mA, VDD = 18V
VIN = 2.4V,
1.5
2.5
IOUT = 10mA, VDD = 18V
IPK
Peak Output Current
VDD = 18V (See Figure 3)
6
A
Switching Time (Note 1)
tR
Rise Time
Figure 1, CL = 2500pF
23
35
nsec
tF
Fall Time
Figure 1, CL = 2500pF
25
35
nsec
tD1
Delay Time
Figure 1
53
75
nsec
tD2
Delay Time
Figure 1
60
75
nsec
Power Supply
IS
Power Supply Current
VIN = 3V
3.5
5
mA
VIN = 0V
0.3
0.5
NOTES: 1. Switching times guaranteed by design.
Maximum Chip Temperature ................................. +150
°C
Storage Temperature Range ................ – 65
°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300
°C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
TC429
6A SINGLE HIGH-SPEED,
CMOS POWER MOSFET DRIVER


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