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BAS125 Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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BAS125 Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type www.kexin.com.cn 1 Diodes 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 Silicon Schottky Diodes BAS125 series Features For low-loss, fast-recovery, meter protection,bias isolation and clamping applications Integrated diffused guard ring Low forward voltage Absolute Maxim um Ratings Ta = 25 Parameter Symbol Conditions Values Unit Reverse voltage VR 25 V Forward current IF 100 mA Surge forward current IFRM t 10 ms 500 mA Total power dissipation Ptot Ts < 25 (Note 3) 250 mW Junction temperature Tj 150 Storage temperature range Tstg -55to+150 Junction-ambient Rth JA Note 2 < 725 K/W Junction-soldering point Rth JS <565 K/W Note 1. For detailed information see chapter Package Outlines. 2.Package mounted on alumina 15 mm 16.7 mm 0.7 mm. 3.450 mW per package. |
Numéro de pièce similaire - BAS125 |
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Description similaire - BAS125 |
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