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TP2522ND Fiches technique(PDF) 1 Page - Supertex, Inc

No de pièce TP2522ND
Description  P-Channel Enhancement-Mode Vertical DMOS FETs
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Fabricant  SUTEX [Supertex, Inc]
Site Internet  http://www.supertex.com
Logo SUTEX - Supertex, Inc

TP2522ND Fiches technique(HTML) 1 Page - Supertex, Inc

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11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
BVDSS /RDS(ON)
VGS(th)
ID(ON)
BV
DGS
(max)
(max)
(min)
TO-243AA*
Die
-200V
12Ω
-2.4V
-0.75A
TP2520N8
-220V
12Ω
-2.4V
-0.75A
TP2522N8
TP2522ND
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
MIL visual screening available.
TP2520
TP2522
Low Threshold
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches
Order Number / Package
Ordering Information
Package Option
P-Channel Enhancement-Mode
Vertical DMOS FETs
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transis-
tors and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Features
❏ Low threshold — -2.4V max.
❏ High input impedance
❏ Low input capacitance — 125pF max.
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
❏ Complementary N- and P-channel devices
Note: See Package Outline section for dimensions.
Product marking for TO-243AA
Where
❋ = 2-week alpha date code
TP5C
TO-243AA
(SOT-89)
G
D
S
D
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BVDGS
Gate-to-Source Voltage
± 20V
Operating and Storage Temperature
-55°C to +150°C
Soldering Temperature*
300°C
* Distance of 1.6 mm from case for 10 seconds.


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