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LM4030AMF-4.096 Datasheet(Fiches technique) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Numéro de pièce LM4030AMF-4.096
Description  Ultra-High Precision Shunt Voltage Reference
Télécharger  14 Pages
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Fabricant  NSC [National Semiconductor (TI)]
Site Internet  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM4030AMF-4.096 Datasheet(HTML) 4 Page - National Semiconductor (TI)

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Electrical Characteristics
LM4030-4.096 (V
OUT = 4.096V)
Limits in standard type are for T
J = 25°C only, and limits in boldface type apply
over the junction temperature (T
J) range of -40°C to +125°C. Minimum and Maximum limits are guaranteed through test, design,
or statistical correlation. Typical values represent the most likely parametric norm at T
J = 25°C, and are provided for reference
purposes only.
Symbol
Parameter
Conditions
Min
(Note
4)
Typ
(Note
5)
Max
(Note 4)
Unit
V
REF
Reverse Breakdown Voltage
I
SHUNT = 130µA
4.096
V
Reverse Breakdown Voltage Tolerance ( I
SHUNT = 130µA)
LM4030A-4.096
(A Grade - 0.05%)
-0.05
0.05
%
LM4030B-4.096
(B Grade - 0.10%)
-0.10
0.10
%
LM4030C-4.096
(C Grade - 0.15%)
-0.15
0.15
%
I
RMIN
Minimum Operating Current
130
µA
TC
Temperature Coefficient (Note 6)
LM4030A-4.096
0°C
T
J + 85°C
10
ppm / °C
-40°C
T
J +125°C
20
ppm / °C
LM4030B-4.096
-40°C
T
J +125°C
20
ppm / °C
LM4030C-4.096
-40°C
T
J +125°C
30
ppm / °C
ΔV
REF/ΔILOAD
Reverse Breakdown Voltage
Change with Current
160µA
I
SHUNT 30mA
15
95
ppm / mA
ΔV
REF
Long Term Stability (Note 7)
1000 Hrs, T
A = 30°C
40
ppm
V
HYST
Thermal Hysteresis (Note 8)
-40°C
T
J +125°C
75
ppm
V
N
Output Noise Voltage (Note 9)
0.1 Hz to 10 Hz
165
µV
PP
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications, see Electrical Characteristics.
Note 2:
Without PCB copper enhancements. The maximum power dissipation must be de-rated at elevated temperatures and is limited by T
JMAX (maximum
junction temperature),
θ
J-A (junction to ambient thermal resistance) and TA (ambient temperature). The maximum power dissipation at any temperature is:
P
DissMAX = (TJMAX - TA) /θJ-A up to the value listed in the Absolute Maximum Ratings. θJ-A for SOT23-5 package is 220°C/W, TJMAX = 125°C.
Note 3:
The human body model is a 100 pF capacitor discharged through a 1.5 k
Ω resistor into each pin.
Note 4:
Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlation using Statistical Quality
Control.
Note 5:
Typical numbers are at 25°C and represent the most likely parametric norm.
Note 6:
Temperature coefficient is measured by the "Box" method; i.e., the maximum
ΔV
REF is divided by the maximum ΔT.
Note 7:
Long term stability is V
REF @25°C measured during 1000 hrs. This measurement is taken for IR = 500 µA.
Note 8:
Thermal hysteresis is defined as the change in +25°C output voltage before and after cycling the device from (-40°C to 125°C) eight times.
Note 9:
Low frequency peak-to-peak noise measured using first-order 0.1 Hz HPF and second-order 10 Hz LPF.
www.national.com
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