BF988 datasheet(2/9 Pages) VISHAY

No de pièce	BF988

Description	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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Fabricant	VISHAY [Vishay Siliconix]

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Document Number 85007

Rev. 1.7, 11-Sep-08

BF988

Vishay Semiconductors

Not for new design, this product will be obsoleted soon

Maximum Thermal Resistance

1) on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35

μm Cu

Electrical DC Characteristics

Tamb = 25 °C, unless otherwise specified

Electrical AC Characteristics

Tamb = 25 °C, unless otherwise specified

VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz

Parameter

Test condition

Symbol

Value

Unit

Channel ambient

1)

RthChA

450

K/W

Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

Drain - source breakdown

voltage

ID = 10 μA, - VG1S = - VG2S = 4 V

V(BR)DS

12

V

Gate 1 - source breakdown

voltage

± IG1S = 10 mA, VG2S = VDS = 0

± V(BR)G1SS

714

V

Gate 2 - source breakdown

voltage

± IG2S = 10 mA, VG1S = VDS = 0

± V(BR)G2SS

714

V

Gate 1 - source leakage current ± VG1S = 5 V, VG2S = VDS = 0

± IG1SS

50

nA

Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0

± IG2SS

50

nA

Drain current

VDS = 15 V, VG1S = 0, VG2S = 4 V BF988A

IDSS

4

10.5

mA

Gate 1 - source cut-off voltage

VDS = 15 V, VG2S = 4 V,

ID = 20 μA

- VG1S(OFF)

2.5

V

Gate 2 - source cut-off voltage

VDS = 15 V, VG1S = 0, ID = 20 μA- VG2S(OFF)

2.0

V

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward transadmittance

|y21s|21

24

mS

Gate 1 input capacitance

Cissg1

2.1

2.5

pF

Gate 2 input capacitance

VG1S = 0, VG2S = 4 V

Cissg2

1.2

pF

Feedback capacitance

Crss

25

fF

Output capacitance

Coss

1.05

pF

Power gain

GS = 2 mS, GL = 0.5 mS,

f = 200 MHz

Gps

28

dB

GS = 3,3 mS, GL = 1 mS,

f = 800 MHz

Gps

16.5

20

dB

AGC range

VG2S = 4 to - 2 V, f = 800 MHz

ΔG

ps

40

dB

Noise figure

GS = 2 mS, GL = 0.5 mS,

f = 200 MHz

F1

dB

GS = 3,3 mS, GL = 1 mS,

f = 800 MHz

F1.5

dB

Numéro de pièce similaire - BF988

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	BF988	139Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 08-Jul-99

More results

Description similaire - BF988

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	BF994S	119Kb / 7P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF966SA	161Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.5, 15-Apr-05
	BF995	116Kb / 7P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF961	160Kb / 7P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.5, 25-Nov-04
Vishay Telefunken	BF966	396Kb / 10P	N-Channel Dual Gate MOS-Fieldeffect Tetrode - Depletion Mode
Vishay Siliconix	BF964S	127Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF988	139Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 08-Jul-99
	BF998	155Kb / 9P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 23-Jun-99
	BF966S	127Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF998	318Kb / 10P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.8, 05-Sep-08

More results

BF988 Fiches technique(PDF) 2 Page - Vishay Siliconix

BF988 Fiches technique(HTML) 2 Page - Vishay Siliconix

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