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BAY135_08 Datasheet(Fiches technique) 2 Page - Vishay Siliconix

Numéro de pièce BAY135_08
Description  Small Signal Switching Diode, High Voltage
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
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Document Number 85552
Rev. 1.7, 19-Feb-07
BAY135
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Package Dimensions in millimeters (inches): DO35
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 100 mA
VF
1000
mV
Reverse current
E
≤ 300 lx, V
R
IR
3nA
E
≤ 300 lx, V
R, Tj = 125 °C
IR
0.5
µA
E
≤ 300 lx, V
R = 60 V
IR
1nA
Breakdown voltage
IR = 5 µA, tp/T = 0.01, tp = 0.3 ms
V(BR)
140
V
Diode capacitance
VR = 0, f = 1 MHz
CD
5pF
Figure 1. Reverse Current vs. Junction Temperature
040
80
120
160
1
10
100
1000
10000
Tj - Junction Temperature (°C)
200
94 9079
Scattering Limit
VR = VRRM
Figure 2. Forward Current vs. Forward Voltage
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
VF - Forward Voltage (V)
2.0
94 9078
Scattering Limit
Tj =25 °C
94 9366
26 min. (1.024)
3.9 max. (0.154)
26 min. (1.024)
Cathode Identification
Rev. 6 - Date: 29.January 2007
Document no.: 6.560-5004.02-4




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