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BAY80 Datasheet(Fiches technique) 2 Page - Vishay Siliconix

Numéro de pièce BAY80
Description  Small Signal Switching Diode, High Voltage
Télécharger  5 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
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Document Number 85553
Rev. 1.8, 19-Feb-07
BAY80
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 0.1 mA
VF
400
520
mV
IF = 10 mA
VF
630
780
mV
IF = 50 mA
VF
730
920
mV
IF = 100 mA
VF
780
1000
mV
IF = 150 mA
VF
1070
mV
Reverse current
VR = 120 V
IR
100
nA
VR = 120 V, Tj = 150 °C
IR
100
µA
Breakdown voltage
IR = 100 µA, tp/T = 0.01,
tp = 0.3 ms
V(BR)
150
V
Diode capacitance
VR = 0, f = 1 MHz
CD
1.5
5
pF
Differential forward resistance
IF = 10 mA
rf
5
Ω
Reverse recovery time
IF = IR = 30 mA, iR = 3 mA,
RL = 100 Ω
trr
50
ns
Figure 1. Reverse Current vs. Junction Temperature
Figure 2. Forward Current vs. Forward Voltage
040
80
120
160
0.01
0.1
1
10
1000
Tj -Junction Temperature (°C)
200
94 9084
100
Scattering Limit
V
R = VRRM
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
VF - Forward Voltage (V)
2.0
94 9085
Scattering Limit
T
j = 25 °C
Figure 3. Differential Forward Resistance vs. Forward Current
0.1
1
10
1
10
100
1000
IF - Forward Current (mA)
100
94 9089
T
j = 25 °C




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