BAR64V-05W-V-GS18 datasheet(2/6 Pages) VISHAY

No de pièce	BAR64V-05W-V-GS18

Description	RF PIN Diodes - Dual, Common Cathode in SOT323

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Fabricant	VISHAY [Vishay Siliconix]

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Document Number 81836

Rev. 1.1, 25-Feb-08

BAR64V-05W-V

Vishay Semiconductors

For technical support, please contact: Diodes-SSP@vishay.com

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Min.

Typ.

Max.

Unit

Reverse voltage

IR = 10 µA

VR

100

V

Reverse current

VR = 50 V

IR

50

nA

Forward voltage

IF = 50 mA

VF

1.1

V

Diode capacitance

f = 1 MHz, VR = 0

CD

0.5

pF

f = 1 MHz, VR = 1 V

CD

0.37

0.5

pF

f = 1 MHz, VR = 20 V

CD

0.23

0.35

pF

Forward resistance

f = 100 MHz, IF = 1 mA

rf

10

20

Ω

f = 100 MHz, IF = 10 mA

rf

2.0

3.8

Ω

f = 100 MHz, IF = 100 mA

rf

0.8

1.35

Ω

Charge carrier life time

IF = 10 mA, IR = 6 mA, iR = 3 mA

trr

1.8

µs

Series inductance

LS

1nH

Figure 1. Forward Resistance vs. Forward Current

Figure 2. Diode Capacitance vs. Reverse Voltage

0.1

1.0

10.0

100.0

0.1

1

10

100

18342

I - Forward Current (mA)

F

f = 100 MHz

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

0.50

16

20

24

28

18334

V - Reverse Voltage (V)

R

f = 1 MHz

12

0

8

4

Figure 3. Forward Current vs. Forward Voltage

Figure 4. Typical Charge Recovery Curve

0.01

0.10

1.00

10.00

100.00

0.5

0.6

0.7

0.8

0.9

1.0

V - Forward Voltage (V)

F

18326

- 8

- 6

- 4

- 2

0

2

4

6

8

10

12

- 500

500

1500

2500

3500

18338

t

rr - Reverse Recovery Time (ns)

I = 10 mA

F

I = 6 mA

R

i =

3 mA

rr

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