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TCLT1108 Fiches technique(PDF) 3 Page - Vishay Siliconix |
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TCLT1108 Fiches technique(HTML) 3 Page - Vishay Siliconix |
3 / 9 page Document Number: 83514 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 2.1, 09-Jan-08 3 TCLT11..Series Optocoupler, Phototransistor Output, SOP-6L5, Half Pitch, Long Mini-Flat Package Vishay Semiconductors Note According to DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT IC/IF VCE = 5 V, IF = 5 mA TCLT1100 CTR 50 600 % VCE = 5 V, IF = 10 mA TCLT1102 CTR 63 125 % TCLT1103 CTR 100 200 % TCLT1104 CTR 160 320 % VCE = 5 V, IF = 1 mA TCLT1102 CTR 22 45 % TCLT1103 CTR 34 70 % TCLT1104 CTR 56 100 % VCE = 5 V, IF = 5 mA TCLT1105 CTR 50 150 % TCLT1106 CTR 100 300 % TCLT1107 CTR 80 160 % TCLT1108 CTR 130 260 % TCLT1109 CTR 200 400 % MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward current IF 130 mA OUTPUT Power dissipation Pdiss 265 mW COUPLER Rated impulse voltage VIOTM 8kV Safety temperature Tsi 150 °C INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Partial discharge test voltage - routine test 100 %, ttest = 1 s Vpd 2.0 kV Partial discharge test voltage - lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 8kV Vpd 1.68 kV Insulation resistance VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Ω |
Numéro de pièce similaire - TCLT1108 |
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Description similaire - TCLT1108 |
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