TCET1116 datasheet(5/11 Pages) VISHAY

No de pièce	TCET1116

Description	Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated

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Fabricant	VISHAY [Vishay Siliconix]

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Document Number: 83546

For technical questions, contact: optocoupler.answers@vishay.com

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Rev. 1.8, 21-Nov-07

5

TCET1110/TCET1110G

Optocoupler, Phototransistor Output,

High Temperature, 110 °C Rated

Vishay Semiconductors

Note

According to DIN EN 60747-5-2 (VDE0884)/ DIN EN 60747-5-5 pending (see figure 1). This optocoupler is suitable for safe electrical isolation

only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

Fig. 1 - Derating Diagram

Fig. 2 - Test Pulse Diagram for Sample Test according to DIN EN

60747-5-2 (VDE 0884)/DIN EN 60747-; IEC60747

MAXIMUM SAFETY RATINGS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward current

IF

130

mA

OUTPUT

Power dissipation

Pdiss

265

mW

COUPLER

Rated impulse voltage

VIOTM

8kV

Safety temperature

Tsi

150

°C

INSULATION RATED PARAMETERS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Partial discharge test voltage -

routine test

100 %, ttest = 1 s

Vpd

1.6

kV

Partial discharge test voltage -

lot test (sample test)

tTr = 60 s, ttest = 10 s,

(see figure 2)

VIOTM

8kV

Vpd

1.3

kV

Insulation resistance

VIO = 500 V

RIO

1012

Ω

VIO = 500 V, Tamb = 100 °C

RIO

1011

Ω

VIO = 500 V, Tamb = 150 °C

(construction test only)

RIO

109

Ω

0

25

50

75

125

0

50

100

150

200

300

T

si - Safety Temperature (°C)

150

94 9182

100

250

Phototransistor

P

si (mW)

IR-Diode

I

si (mA)

t

13930

t1, t2 = 1 to 10 s

t3, t4 = 1 s

ttest = 10 s

tstres = 12 s

VIOTM

VPd

VIOWM

VIORM

0

t1

ttest

tTr = 60 s

tstres

t3

t4

t2

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