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TCED2100 Fiches technique(PDF) 3 Page - Vishay Siliconix |
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TCED2100 Fiches technique(HTML) 3 Page - Vishay Siliconix |
3 / 8 page www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83728 806 Rev. 1.6, 16-May-08 TCED2100/TCED4100 Vishay Semiconductors Optocoupler, Photodarlington Output, Dual Channel, High Gain Note According to DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5/DIN EN 60747-; IEC60747 MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward current IF 130 mA OUTPUT Power dissipation Pdiss 265 mW COUPLER Rated impulse voltage VIOTM 8kV Safety temperature Tsi 150 °C INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Partial discharge test voltage - routine test 100 %, ttest = 1 s Vpd 1.6 kV Partial discharge test voltage - lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 8kV Vpd 1.3 kV Insulation resistance VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Ω 0 25 50 75 125 0 50 100 150 200 300 Tamb - Ambient Temperature (°C) 150 14887 100 250 Photodarlington Psi (mW) IR-Diode Isi (mA) t 13930 t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VIOTM VPd VIOWM VIORM 0 t1 ttest tTr = 60 s tstres t3 t4 t2 SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Rise time VCC = 2 V, IC = 10 mA, RL = 100 Ω, (see figure 3) tr 300 µs Fall time VCC = 2 V, IC = 10 mA, RL = 100 Ω, (see figure 3) tf 250 µs |
Numéro de pièce similaire - TCED2100_08 |
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Description similaire - TCED2100_08 |
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