FEATURES

D TrenchFETr Power MOSFET

Si5402BDC

Vishay Siliconix

New Product

Document Number: 73051

S-41495—Rev. A, 09-Jun-04

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

30

6.7

30

6.1

1206-8 ChipFE

Tr

D

D

D

G

D

D

D

S

1

Bottom View

D

G

S

N-Channel MOSFET

Marking Code

AD

XXX

Lot Traceability

and Date Code

Part # Code

Ordering Information: Si5402BDC-T1—E3

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

"20

V

6.7

4.9

4.8

3.5

A

Pulsed Drain Current

20

A

Continuous Source Current (Diode Conduction)a

2.1

1.1

Maximum Power Dissipationa

2.5

1.3

W

Maximum Power Dissipationa

1.3

0.7

W

Operating Junction and Storage Temperature Range

−55 to 150

_C

260

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi ta

t v 5 sec

R

45

50

Maximum Junction-to-Ambienta

Steady State

80

95

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

18

22

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation

process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-

nection.

c.

Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.