SI4310BDY-E3 datasheet(3/10 Pages) VISHAY

No de pièce	SI4310BDY-E3

Description	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Si4310BDY

Vishay Siliconix

New Product

Document Number: 73064

S-41530—Rev. A, 16-Aug-04

www.vishay.com

3

SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Forward Voltage Drop

VF

IF = 3 A

0.485

0.53

V

Forward Voltage Drop

VF

IF = 3 A, TJ = 125_C

0.42

V

Vr = 30 V

0.008

0.100

Maximum Reverse Leakage Current

Irm

Vr = 30 V, TJ = 75_C

0.4

5

mA

g

rm

Vr = −30 V, TJ = 125_C

6.5

20

Junction Capacitance

CT

Vr = 15 V

102

pF

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

CHANNEL-1

0

5

10

15

20

25

30

35

40

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0

5

10

15

20

25

30

35

40

0

1234

5

VGS = 10 thru 5 V

TC = 125_C

−55_C

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

4 V

3 V

0

400

800

1200

1600

2000

0

5

10

15

20

25

30

0.000

0.004

0.008

0.012

0.016

0.020

0

5

10

15

20

25

30

VDS − Drain-to-Source Voltage (V)

Crss

ID − Drain Current (A)

On-Resistance vs. Drain Current

Capacitance

VGS = 4.5 V

VGS = 10 V

Coss

Ciss

Numéro de pièce similaire - SI4310BDY-E3

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Vishay Siliconix	SI4310BDY	152Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode 01-Jan-2022
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SI4310BDY-E3 Fiches technique(PDF) 3 Page - Vishay Siliconix

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