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SI3438DV Fiches technique(PDF) 4 Page - Vishay Siliconix |
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SI3438DV Fiches technique(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 68393 S-81013-Rev. A, 05-May-08 Vishay Siliconix Si3438DV New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD -Source-to-Drain Voltage (V) 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) ID =5mA On-Resistance vs. Gate-to-Source Temperature Single Pulse Power, Junction-to-Ambient ID =5A 0.00 0.04 0.08 0.12 0.16 0.20 02 4 6 8 10 VGS - Gate-to-Source Voltage (V) TJ =25 °C TJ = 125 °C 0 9 18 27 36 45 0 1 1 1 0 0 . 00.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA =25 °C Single Pulse 10 ms 100 ms 1s 10 s DC Limited byRDS(on)* BVDSS Limited 1ms |
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