SI2309CDS datasheet(4/6 Pages) VISHAY

No de pièce	SI2309CDS

Description	P-Channel 60-V (D-S) MOSFET

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Document Number: 68980

S-82584-Rev. A, 27-Oct-08

Vishay Siliconix

Si2309CDS

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.00.3

0.60.9

1.21.5

1

0.01

0.001

0.1

10

100

TJ = 150 °C

TJ = - 50 °C

TJ = 25 °C

VSD -Source-to-Drain Voltage (V)

- 0.4

- 0.2

0.0

0.2

0.4

0.6

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

ID =1mA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.0

0.4

0.8

1.2

1.6

2.0

02

4

6

8

10

TJ = 25 °C

TJ = 125 °C

ID =1.25A

VGS - Gate-to-Source Voltage (V)

0

2

4

6

8

0.01

0.1

1

10

100

1000

Time (s)

TA = 25 °C

Safe Operating Area, Junction-to-Ambient

10

0.1

1

10

1

TA =25 °C

Single Pulse

1ms

0.01

100

100 µs

Limited byRDS(on)*

10 µs

10 ms

100 ms

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

1s,10s

100 s, DC

Numéro de pièce similaire - SI2309CDS

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	Si2309CDS	212Kb / 9P	P-Channel 60-V (D-S) MOSFET Rev. A, 27-Oct-08
Vishay Siliconix	SI2309CDS	174Kb / 8P	P-Channel 60-V (D-S) MOSFET 01-Jan-2022
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Vishay Siliconix	SI2309CDS	212Kb / 9P	P-Channel 60-V (D-S) MOSFET Rev. A, 27-Oct-08
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Description similaire - SI2309CDS

Fabricant	No de pièce	Fiches technique	Description
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Analog Power	AM7461P	182Kb / 3P	P-Channel 60-V (D-S) MOSFET
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