SI1917EDH datasheet(4/6 Pages) VISHAY

No de pièce	SI1917EDH

Description	Dual P-Channel 12-V (D-S) MOSFET

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Si1917EDH

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Document Number: 71414

S-03174—Rev. A, 07-Mar-01

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

–0.2

–0.1

0.0

0.1

0.2

0.3

–50

–25

0

25

50

75

100

125

150

ID = 100 mA

1.0

1.2

0.0

0.4

0.8

1.2

1.6

2.0

0

1234

5

0.1

1

3

ID = –1.0 A

0

0.2

0.6

0.8

Threshold Voltage

TJ – Temperature (_C)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD – Source-to-Drain Voltage (V)

VGS – Gate-to-Source Voltage (V)

0

1

5

Single Pulse Power, Junction-to-Ambient

Time (sec)

3

4

10–3

10–2

1

10

600

10–1

10–4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 170_C/W

3. TJM – TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

1

600

10

0.1

0.01

TJ = 25_C

2

TJ = 150_C

0.4

100

Numéro de pièce similaire - SI1917EDH

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Description similaire - SI1917EDH

Fabricant	No de pièce	Fiches technique	Description
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