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SI1433DH Fiches technique(PDF) 4 Page - Vishay Siliconix |
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SI1433DH Fiches technique(HTML) 4 Page - Vishay Siliconix |
4 / 6 page www.vishay.com 4 Document Number: 72323 S-71951-Rev. B, 10-Sep-07 Vishay Siliconix Si1433DH New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Threshold Voltage - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) ID = 250 µA Single Pulse Power, Junction-to-Ambient 0 7 35 Time (s) 21 28 0.1 10 1 0.01 0.001 14 Safe Operating Area 10 1 0.1 1 10 100 0.01 TC = 25 °C Single Pulse 0.1 Limited by rDS(on)* 1 ms 10 ms 100 ms 1 s 10 s DC VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which rDS(on) is specified > Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 600 10-1 10-4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 105 °C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
Numéro de pièce similaire - SI1433DH_08 |
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Description similaire - SI1433DH_08 |
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