SI1307EDL datasheet(2/6 Pages) VISHAY

No de pièce	SI1307EDL

Description	P-Channel 1.8-V (G-S) MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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Si1307DL

Vishay Siliconix

New Product

www.siliconix.com

S FaxBack 408-970-5600

2

Document Number: 71096

Pending—Rev. A, 10-Nov-99

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–045

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "4.5 V

"1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = –9.6 V, VGS = 0 V

–1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = –9.6 V, VGS = 0 V, TJ = 70_C

–5

mA

On-State Drain Currenta

ID(on)

VDS = –5 V, VGS = –4.5 V

–3

A

DiS

OS

R

i

a

VGS = –4.5 V, ID = –1 A

0.240

0.290

W

Drain-Source On-State Resistancea

rDS(on)

VGS = –2.5 V, ID = –0.5 A

0.350

0.435

W

VGS = –1.8 V, ID = –0.3 A

0.480

0.580

Forward Transconductancea

gfs

VDS = –5 V, ID = –1 A

3.5

S

Diode Forward Voltagea

VSD

IS = –1 A, VGS = 0 V

–1.2

V

Dynamicb

Total Gate Charge

Qg

V6 V V

4 5 V I

1 A

3.2

5

C

Gate-Source Charge

Qgs

VDS = –6 V, VGS = –4.5 V, ID = –1 A

0.69

nC

Gate-Drain Charge

Qgd

0.61

Turn-On Delay Time

td(on)

V6 V R

6

W

210

340

Rise Time

tr

VDD = –6 V, RL = 6 W

I1 A V

4 5 V R

6

W

450

720

Turn-Off Delay Time

td(off)

DD

,

L

ID ^ –1 A, VGEN = –4.5 V, RG = 6 W

910

1550

ns

Fall Time

tf

1000

1600

Source-Drain Reverse Recovery Time

trr

IF = –1 A, di/dt = 100 A/ms

540

860

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

1

2

3

4

5

6

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

2

4

6

8

012345

VGS = 4.5 V

TC = –55_C

125

_C

2 V

25

_C

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

1.5 V

2.5 V

3 V

3.5 V

4 V

1 V

Numéro de pièce similaire - SI1307EDL

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI1307DL	68Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. A, 01-Nov-99
Vishay Siliconix	SI1307DL-T1-E3	101Kb / 5P	P-Channel 1.8 V (G-S) MOSFET Rev. B, 29-Mar-10

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