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SI1307EDL Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI1307EDL Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 6 page Si1307DL Vishay Siliconix New Product www.siliconix.com S FaxBack 408-970-5600 2 Document Number: 71096 Pending—Rev. A, 10-Nov-99 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA –045 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "4.5 V "1 mA Zero Gate Voltage Drain Current IDSS VDS = –9.6 V, VGS = 0 V –1 mA Zero Gate Voltage Drain Current IDSS VDS = –9.6 V, VGS = 0 V, TJ = 70_C –5 mA On-State Drain Currenta ID(on) VDS = –5 V, VGS = –4.5 V –3 A DiS OS R i a VGS = –4.5 V, ID = –1 A 0.240 0.290 W Drain-Source On-State Resistancea rDS(on) VGS = –2.5 V, ID = –0.5 A 0.350 0.435 W VGS = –1.8 V, ID = –0.3 A 0.480 0.580 Forward Transconductancea gfs VDS = –5 V, ID = –1 A 3.5 S Diode Forward Voltagea VSD IS = –1 A, VGS = 0 V –1.2 V Dynamicb Total Gate Charge Qg V6 V V 4 5 V I 1 A 3.2 5 C Gate-Source Charge Qgs VDS = –6 V, VGS = –4.5 V, ID = –1 A 0.69 nC Gate-Drain Charge Qgd 0.61 Turn-On Delay Time td(on) V6 V R 6 W 210 340 Rise Time tr VDD = –6 V, RL = 6 W I1 A V 4 5 V R 6 W 450 720 Turn-Off Delay Time td(off) DD , L ID ^ –1 A, VGEN = –4.5 V, RG = 6 W 910 1550 ns Fall Time tf 1000 1600 Source-Drain Reverse Recovery Time trr IF = –1 A, di/dt = 100 A/ms 540 860 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 1 2 3 4 5 6 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 012345 VGS = 4.5 V TC = –55_C 125 _C 2 V 25 _C Output Characteristics Transfer Characteristics VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) 1.5 V 2.5 V 3 V 3.5 V 4 V 1 V |
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