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SI1305EDL Fiches technique(PDF) 3 Page - Vishay Siliconix |
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SI1305EDL Fiches technique(HTML) 3 Page - Vishay Siliconix |
3 / 6 page Si1305EDL Vishay Siliconix New Product Document Number: 71095 Pending—Rev. A, 09-Nov-99 www.siliconix.com S FaxBack 408-970-5600 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 0.2 0.4 0.6 0.8 1.0 1.2 0 50 100 150 200 250 300 350 024 68 0 0.4 0.8 1.2 1.6 –50 –25 0 25 50 75 100 125 150 0 2 4 6 8 012345 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 01234567 VDS – Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 4 V ID = 1 A ID – Drain Current (A) VGS = 4.5 V ID = 1 A VGS = 2.5 V VGS = 1.8 V Gate Charge OnResistance vs. Drain Current Qg – Total Gate Charge (nC) Capacitance OnResistance vs. Junction Temperature TJ – Junction Temperature (_C) 0 0.2 0.4 0.6 0.8 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 ID = 1 A 10 1 0.001 SourceDrain Diode Forward Voltage OnResistance vs. GatetoSource Voltage VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) VGS = 4.5 V 0.1 0.01 TJ = 150_C TJ = 25_C |
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