SI1067X-T1-GE3 datasheet(3/6 Pages) VISHAY

No de pièce	SI1067X-T1-GE3

Description	P-Channel 20-V (D-S) MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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Document Number: 74322

S-82489-Rev. C, 13-Oct-08

www.vishay.com

3

Vishay Siliconix

Si1067X

New Product

TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

2

4

6

8

0.0

1.0

2.0

3.0

4.0

VGS = 5 V thru 2.5 V

VDS - Drain-to-Source Voltage (V)

VGS = 1.5 V

VGS = 1.0 V

VGS = 2 V

0

0.06

0.12

0.18

0.24

0.3

0246

8

I - Drain Current (A)

VGS = 2.5 V

VGS = 4.5 V

VGS = 1.8 V

D

0

1

2

3

4

5

024

6

8

ID = 1.06 A

Qg - Total Gate Charge (nC)

VDS = 10 V

VDS = 16 V

Transfer Characteristics curves vs. Temperature

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.5

1.0

1.5

2.0

0.0

0.4

0.8

1.2

1.6

2.0

TC = 25 °C

VGS - Gate-to-Source Voltage (V)

TC = 125 °C

TC = - 55 °C

0

200

400

600

800

04

8

12

16

20

Crss

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

- 50

- 25

0

25

50

75

100

125

150

TJ - Junction Temperature (°C)

VGS = 2.5 V, ID = 1.0 A

VGS = 4.5 V, ID = 1.06 A

VGS = 1.8 V, ID = 0.89 A

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Description similaire - SI1067X-T1-GE3

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI9400DY	58Kb / 4P	P-Channel 20-V (D-S) MOSFET Rev. K, 02-Mar-98
	SI9424BDY	44Kb / 5P	P-Channel 20-V (D-S) MOSFET Rev. A, 07-Oct-02
	SI8407DB	69Kb / 6P	P-Channel 20-V (D-S) MOSFET Rev. B, 17-Jan-05
	SI7401DN	240Kb / 3P	P-Channel 20-V (D-S) MOSFET 31-May-01
	SI7403BDN	106Kb / 8P	P-Channel 20-V (D-S) MOSFET Rev. A, 21-Mar-05
	SIS407DN-T1-GE3	548Kb / 13P	P-Channel 20 V (D-S) MOSFET Rev. B, 06-Sep-10
	SI4477DY-T1-GE3	261Kb / 10P	P-Channel 20-V (D-S) MOSFET Rev. A, 18-May-09
	SIA431DJ	221Kb / 9P	P-Channel 20-V (D-S) MOSFET Rev. B, 21-May-12
	SI1077X	183Kb / 8P	P-Channel 20 V (D-S) MOSFET Rev. A, 24-Dec-12
	SI5457DC	244Kb / 11P	P-Channel 20 V (D-S) MOSFET Rev. A, 06-Sep-10
Analog Power	AM4421P	423Kb / 5P	P-Channel 20-V (D-S) MOSFET

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