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SI1056X Fiches technique(PDF) 3 Page - Vishay Siliconix |
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SI1056X Fiches technique(HTML) 3 Page - Vishay Siliconix |
3 / 6 page Document Number: 73895 S-80641-Rev. B, 24-Mar-08 www.vishay.com 3 Vishay Siliconix Si1056X TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Qg - Gate Charge 0 1 2 3 4 5 6 0.0 0.6 1.2 1.8 2.4 VDS - Drain-to-Source Voltage (V) VGS = 5 V thru 2 V VGS = 1.5 V VGS = 1.0 V 0.03 0.06 0.09 0.12 0.15 0123456 VGS = 4.5 V ID - Drain Current (A) VGS = 1.8 V VGS = 2.5 V 0 1 2 3 4 5 0123456 ID = 1.3 A Qg - Total Gate Charge (nC) VGS = 16 V VDS = 10 V Transfer Characteristics Curves vs. Temp Capacitance On-Resistance vs. Junction Temperature 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 0.0 0.4 0.8 1.2 1.6 2.0 TJ = 25 °C TJ = 125 °C TJ = - 55 °C VGS - Gate-to-Source Voltage (V) Crss 0 200 400 600 800 04 8 12 16 20 Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) VGS = 1.8 V, ID = 1.1 A VGS = 2.5 V, ID = 1.2 A VGS = 4.5 V, ID = 1.3 A |
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Description similaire - SI1056X |
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