SI1013R datasheet(2/6 Pages) VISHAY

No de pièce	SI1013R

Description	P-Channel 1.8-V (G-S) MOSFET

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Document Number: 71167

S-81444-Rev. C, 23-Jun-08

Vishay Siliconix

Si1013R/X

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

TA = 25 °C, unless otherwise noted

For the following graphs, P-Channel negative polarities for all voltage and current values are represented as positive values.

SPECIFICATIONS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.45

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 4.5 V

± 1

± 2

µA

Zero Gate Voltage Drain Current

IDSS

VDS = - 16 V, VGS = 0 V

- 0.3

- 100

nA

VDS = - 16 V, VGS = 0 V, TJ = 85 °C

- 5

µA

On-State Drain Currenta

ID(on)

VDS = - 5 V, VGS = - 4.5 V

- 700

mA

Drain-Source On-State

Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 350 mA

0.8

1.2

Ω

VGS = - 2.5 V, ID = - 300 mA

1.2

1.6

VGS = - 1.8 V, ID = - 150 mA

1.8

2.7

Forward Transconductancea

gfs

VDS= - 10 V, ID = - 250 mA

0.4

S

Diode Forward Voltagea

VSD

IS = - 150 mA, VGS = 0 V

- 0.8

- 1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = - 10 V, VGS = - 4.5 V, ID = - 250 mA

1500

pC

Gate-Source Charge

Qgs

150

Gate-Drain Charge

Qgd

450

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 47 Ω

ID ≅ - 200 mA, VGEN = - 4.5 V, RG = 10 Ω

5

ns

Rise Time

tr

9

Turn-Off Delay Time

td(off)

35

Fall Time

tf

11

Output Characteristics

0.0

0.2

0.4

0.6

0.8

1.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 5 thru 3 V

2 V

VDS - Drain-to-Source Voltage (V)

1.8 V

2.5 V

Transfer Characteristics

0

200

400

600

800

1000

0.0

0.5

1.0

1.5

2.0

2.5

3.0

TJ = - 55 °C

125 °C

25 °C

VGS - Gate-to-Source Voltage (V)

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