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SI1016X-T1-GE3 Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce SI1016X-T1-GE3
Description  Complementary N- and P-Channel 20-V (D-S) MOSFET
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Document Number: 71168
S-80427-Rev. D, 03-Mar-08
Vishay Siliconix
Si1016X
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
N-Ch
0.45
1
V
VDS = VGS, ID = - 250 µA
P-Ch
- 0.45
- 1
Gate Body Leakage
IGSS
VDS = 0 V, VGS = ± 4.5 V
N-Ch
± 0.5
± 1.0
µA
P-Ch
± 1.0
± 2.0
Zero Gate Voltage Drain
Current
IDSS
VDS = 16 V, VGS = 0 V
N-Ch
0.3
100
nA
VDS = - 16 V, VGS = 0 V
P-Ch
- 0.3
- 100
VDS = 16 V, VGS = 0 V, TJ = 85 °C
N-Ch
5
µA
VDS = - 16 V, VGS = 0 V, TJ = 85 °C
P-Ch
- 5
On State Drain Currenta
ID(on)
VDS = 5 V, VGS = 4.5 V
N-Ch
700
mA
VDS = - 5 V, VGS = - 4.5 V
P-Ch
- 700
Drain-Source On-State
Resistancea
RDS(on)
VGS = 4.5 V, ID = 600 mA
N-Ch
0.41
0.70
Ω
VGS = - 4.5 V, ID = - 350 mA
P-Ch
0.80
1.2
VGS = 2.5 V, ID = 500 mA
N-Ch
0.53
0.85
VGS = - 2.5 V, ID = - 300 mA
P-Ch
1.20
1.6
VGS = 1.8 V, ID = 350 mA
N-Ch
0.70
1.25
VGS = - 1.8 V, ID = - 150 mA
P-Ch
1.80
2.7
Forward Transconductancea
gfs
VDS = 10 V, ID = 400 mA
N-Ch
1.0
S
VDS= - 10 V, ID = - 250 mA
P-Ch
0.4
Diode Forward Voltagea
VSD
IS = 150 mA, VGS = 0 V
N-Ch
0.8
1.2
V
IS = - 150 mA, VGS = 0 V
P-Ch
- 0.8
- 1.2
Dynamicb
Total Gate Charge
Qg
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 250 mA
P-Channel
VDS = - 10 V, VGS = - 4.5 V, ID = - 250 mA
N-Ch
750
pC
P-Ch
1500
Gate-Source Charge
Qgs
N-Ch
75
P-Ch
150
Gate-Drain Charge
Qgd
N-Ch
225
P-Ch
450
Turn-On Time
tON
N-Channel
VDD = 10 V, RL = 47 Ω
ID ≅ 200 mA, VGEN = 4.5 V, RG = 10 Ω
P-Channel
VDD = - 10 V, RL = 47 Ω
ID ≅ - 200 mA, VGEN = - 4.5 V, RG = 10 Ω
N-Ch
5
ns
P-Ch
5
Turn-Off Time
tOFF
N-Ch
P-Ch
25
35


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