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SI1012R Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SI1012R Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 6 page Vishay Siliconix Si1012R/X Document Number: 71166 S-81543-Rev. C, 07-Jul-08 www.vishay.com 1 N-Channel 1.8-V (G-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET: 1.8 V Rated • Gate-Source ESD Protected: 2000 V • High-Side Switching • Low On-Resistance: 0.7 Ω • Low Threshold: 0.8 V (typ.) • Fast Switching Speed: 10 ns APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Circuits • Low Battery Voltage Operation PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (mA) 20 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 Top View 2 1 S D G 3 SC-75A or SC-89 Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board. ORDERING INFORMATION Part Number Package Marking Code Si1012R-T1-E3 (Lead (Pb)-free) Si1012R-T1-GE3 (Lead (Pb)-free and Halogen-free) SC-75A (SOT-416) C Si1012X-T1-E3 (Lead (Pb)-free) Si1012X-T1-GE3 (Lead (Pb)-free and Halogen-free) SC-89 (SOT-490) A ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 6 Continuous Drain Current (TJ = 150 °C) b TA = 25 °C ID 600 500 mA TA = 85 °C 400 350 Pulsed Drain Currenta IDM 1000 Continuous Source Current (Diode Conduction)b IS 275 250 Maximum Power Dissipationb for SC-75 TA = 25 °C PD 175 150 mW TA = 85 °C 90 80 Maximum Power Dissipationb for SC-89 TA = 25 °C 275 250 TA = 85 °C 160 140 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V RoHS COMPLIANT |
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