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IRLR110 Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce IRLR110
Description  Power MOSFET
Download  8 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRLR110 Fiches technique(HTML) 2 Page - Vishay Siliconix

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Document Number: 91323
2
S-81304-Rev. A, 16-Jun-08
IRLR110, IRLU110, SiHLR110, SiHLU110
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤ 300 µs; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-
-
110
°C/W
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
--
50
Maximum Junction-to-Case (Drain)
RthJC
--
5.0
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
100
-
-
V
VDS Temperature Coefficient
ΔV
DS/TJ
Reference to 25 °C, ID = 1 mA
-
0.12
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
1.0
-
2.0
V
Gate-Source Leakage
IGSS
VGS = ± 10 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
-
-
25
µA
VDS = 80 V, VGS = 0 V, TJ = 125 °C
-
-
250
Drain-Source On-State Resistance
RDS(on)
VGS = 5.0 V
ID = 2.6 Ab
-
-
0.54
Ω
VGS = 4.0 V
ID = 2.2 Ab
-
-
0.76
Forward Transconductance
gfs
VDS = 50 V, ID = 2.6 A
2.3
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
250
-
pF
Output Capacitance
Coss
-80
-
Reverse Transfer Capacitance
Crss
-15
-
Total Gate Charge
Qg
VGS = 5.0 V
ID = 5.6 A, VDS = 80 V,
see fig. 6 and 13b
--
6.1
nC
Gate-Source Charge
Qgs
--
2.0
Gate-Drain Charge
Qgd
--
3.3
Turn-On Delay Time
td(on)
VDD = 50 V, ID = 5.6 A,
RG = 12 Ω, RD = 8.4 Ω, see fig. 10b
-9.3
-
ns
Rise Time
tr
-47
-
Turn-Off Delay Time
td(off)
-16
-
Fall Time
tf
-17
-
Internal Drain Inductance
LD
Between lead,
6 mm (0.25") from
package and center of
die contactc
-4.5
-
nH
Internal Source Inductance
LS
-7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
4.3
A
Pulsed Diode Forward Currenta
ISM
--
17
Body Diode Voltage
VSD
TJ = 25 °C, IS =4.3 A, VGS = 0 Vb
--
2.5
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/µsb
-
100
130
ns
Body Diode Reverse Recovery Charge
Qrr
-
0.50
0.65
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G


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