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IRFPS43N50KPBF Fiches technique(PDF) 7 Page - Vishay Siliconix |
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IRFPS43N50KPBF Fiches technique(HTML) 7 Page - Vishay Siliconix |
7 / 8 page Document Number: 91262 www.vishay.com S-81367-Rev. B, 21-Jul-08 7 IRFPS43N50K, SiHFPS43N50K Vishay Siliconix Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91262. P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 V* VDD ISD Driver gate drive D.U.T. ISD waveform D.U.T. VDS waveform Inductor current D = P.W. Period + - + + + - - - * VGS = 5 V for logic level devices Peak Diode Recovery dV/dt Test Circuit R G VDD • dV/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by duty factor "D" • D.U.T. - device under test D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer |
Numéro de pièce similaire - IRFPS43N50KPBF |
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