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IRFPS43N50KPBF Fiches technique(PDF) 7 Page - Vishay Siliconix

No de pièce IRFPS43N50KPBF
Description  RFPS43N50K
Download  8 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRFPS43N50KPBF Fiches technique(HTML) 7 Page - Vishay Siliconix

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Document Number: 91262
www.vishay.com
S-81367-Rev. B, 21-Jul-08
7
IRFPS43N50K, SiHFPS43N50K
Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91262.
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple
≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 V*
VDD
ISD
Driver gate drive
D.U.T. ISD waveform
D.U.T. VDS waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
* VGS = 5 V for logic level devices
Peak Diode Recovery dV/dt Test Circuit
R G
VDD
• dV/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - device under test
D.U.T
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer


Numéro de pièce similaire - IRFPS43N50KPBF

FabricantNo de pièceFiches techniqueDescription
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International Rectifier
IRFPS43N50KPBF IRF-IRFPS43N50KPBF Datasheet
130Kb / 8P
   HEXFET짰 Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.078廓 , ID = 47A )
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