ECH8608

No.8179-1/6

Features

•

The ECH8608 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and

ultrahigh-speed switching, thereby enabling high-density mounting.

•

2.5V drive.

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

N-channel

P-channel

Unit

Drain-to-Source Voltage

VDSS

20

--20

V

Gate-to-Source Voltage

VGSS

±10

±10

V

Drain Current (DC)

ID

6

--4

A

Drain Current (Pulse)

IDP

PW

≤10µs, duty cycle≤1%

40

--40

A

Allowable Power Dissipation

PD

1.3

W

Total Dissipation

PT

1.5

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

[N-channel]

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0

20

V

Zero-Gate Voltage Drain Current

IDSS

VDS=20V, VGS=0

1

µA

Gate-to-Source Leakage Current

IGSS

VGS=±8V, VDS=0

±10

µA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

0.5

1.3

V

Forward Transfer Admittance

yfs

VDS=10V, ID=3A

7

10

S

RDS(on)1

ID=3A, VGS=4V

22

30

m

Ω

Static Drain-to-Source On-State Resistance

RDS(on)2

ID=1.5A, VGS=2.5V

30

44

m

Ω

Input Capacitance

Ciss

VDS=10V, f=1MHz

780

pF

Output Capacitance

Coss

VDS=10V, f=1MHz

300

pF

Reverse Transfer Capacitance

Crss

VDS=10V, f=1MHz

150

pF

Marking : FA

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN8179

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

11205PE TS IM TB-00001088

ECH8608

N-Channel and P-Channel Silicon MOSFETs

General-Purpose Switching Device

Applications