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110RKI40PBF Fiches technique(PDF) 6 Page - Vishay Siliconix

No de pièce 110RKI40PBF
Description  Phase Control Thyristors (Stud Version), 110 A
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

110RKI40PBF Fiches technique(HTML) 6 Page - Vishay Siliconix

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Document Number: 94379
6
Revision: 11-Aug-08
110RKI...PbF/111RKI...PbF Series
Vishay High Power Products Phase Control Thyristors
(Stud Version), 110 A
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1.0
10
100
0.001
0.01
0.1
1.0
10
Instantaneous Gate Current (A)
100
1000
V
GD
I
GD
(b)
(a)
(1)
(3)
Frequency limited by P
G(AV)
(2)
(1) P
GM = 12 W, tp = 5 ms
(2) P
GM = 30 W, tp = 2 ms
(3) P
GM = 60 W, tp = 1 ms
(4) P
GM = 200 W, tp = 300 µs
Device: 111RKI Series
(4)
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 30
Ω
t
r ≤ 0.5 µs, tp ≥ 6 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 15 V, 40 Ω
t
r ≤ 1 µs, tp ≥ 6 µs
1
-IT(AV) rated average output current (rounded/10)
2
-
0 = Eyelet terminals (gate and auxiliary cathode leads)
3
-
Thyristor
4
5
-
Lead (Pb)-free
1 = Fast-on terminals (gate and auxiliary cathode leads)
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
Device code
5
13
24
11
0
RKI
120 PbF
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95003


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