Document Number: 91141

www.vishay.com

S-Pending-Rev. A, 13-Jun-08

WORK-IN-PROGRESS

1

Power MOSFET

IRFD9220, SiHFD9220

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• For Automatic Insertion

• End Stackable

• P-Channel

• Fast Switching

• Ease of Paralleling

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable case

style which can be stacked in multiple combinations on

standard 0.1" pin centers. The dual drain serves as a thermal

link to the mounting surface for power dissipation levels up to

1 W.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

- 200

1.5

15

3.2

8.4

Configuration

Single

S

G

D

P-Channel MOSFET

HEXDIP

D

S

G

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

HEXDIP

Lead (Pb)-free

IRFD9220PbF

SiHFD9220-E3

SnPb

IRFD9220

SiHFD9220

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

- 200

V

Gate-Source Voltage

± 20

Continuous Drain Current

- 0.56

A

- 0.36

- 4.5

Linear Derating Factor

0.0083

W/°C

420

mJ

- 0.56

A

0.10

mJ

Maximum Power Dissipation

1.0

W

dV/dt

- 5.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply