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IRFD320 Fiches technique(PDF) 1 Page - Vishay Siliconix

No de pièce IRFD320
Description  Power MOSFET
Download  8 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRFD320 Fiches technique(HTML) 1 Page - Vishay Siliconix

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Document Number: 91134
www.vishay.com
S-Pending-Rev. A, 23-Jun-08
WORK-IN-PROGRESS
1
Power MOSFET
IRFD320, SiHFD320
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
low
on-resistance
and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertiable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serveres as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 21 mH, RG = 25 Ω, IAS = 2.0 A (see fig. 12).
c. ISD ≤ 2.0 A, dI/dt ≤ 40 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V)
400
RDS(on) (Ω)VGS = 10 V
1.8
Qg (Max.) (nC)
20
Qgs (nC)
3.3
Qgd (nC)
11
Configuration
Single
N-Channel MOSFET
G
D
S
HEXDIP
D
S
G
RoHS
COMPLIANT
ORDERING INFORMATION
Package
HEXDIP
Lead (Pb)-free
IRFD320PbF
SiHFD320-E3
SnPb
IRFD320
SiHFD320
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
400
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
0.49
A
TC = 100 °C
0.31
Pulsed Drain Currenta
IDM
3.9
Linear Derating Factor
0.0083
W/°C
Single Pulse Avalanche Energyb
EAS
48
mJ
Avalanche Currenta
IAR
0.49
A
Repetitive Avalanche Energya
EAR
0.10
mJ
Maximum Power Dissipation
TC = 25 °C
PD
1.0
W
Peak Diode Recovery dV/dtc
dV/dt
4.0
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
* Pb containing terminations are not RoHS compliant, exemptions may apply


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