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TDA7296SV Fiches technique(PDF) 8 Page - STMicroelectronics |
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TDA7296SV Fiches technique(HTML) 8 Page - STMicroelectronics |
8 / 11 page APPLICATION NOTE: (ref. fig. 7) Modular Application (more Devices in Parallel) The use of the modular application lets very high power be delivered to very low impedance loads. The modular application implies one device to act as a master and the others as slaves. The slave power stages are driven by the master device and work in parallel all together, while the input and the gain stages of the slave device are disabled, the figure below shows the connections required to configure two devices to work to- gether. The master chip connections are the same as the normal single ones. The outputs can be connected together with- out the need of any ballast resistance. The slave SGND pin must be tied to the nega- tive supply. The slave ST-BY pin must be connected to ST-BY pin. The bootstrap lines must be connected to- gether and the bootstrap capacitor must be in- creased: for N devices the boostrap capacitor must be 22 µF times N. The slave Mute and IN-pins must be grounded. THE BOOTSTRAP CAPACITOR For compatibility purpose with the previous de- vices of the family, the boostrap capacitor can be connected both between the bootstrap pin (6) and the output pin (14) or between the boostrap pin (6) and the bootstrap loader pin (12). IN- 2 R2 680 Ω C2 22 µF C1 470nF IN+ R1 22K 3 R3 22K - + MUTE STBY 4 10 9 SGND MUTE STBY R4 22K THERMAL SHUTDOWN S/C PROTECTION R5 10K C3 10 µF C4 10 µF 1 STBY-GND C5 47 µF 713 14 6 15 8 -Vs -PWVs BOOTSTRAP OUT +PWVs +Vs C9 100nF C8 1000 µF -Vs D97AU808C +Vs C7 100nF C6 1000 µF BUFFER DRIVER 11 BOOT LOADER 12 IN- 2 IN+ 3 - + MUTE STBY 4 10 9 SGND MUTE THERMAL SHUTDOWN S/C PROTECTION 1 STBY-GND 713 14 6 15 8 -Vs -PWVs BOOTSTRAP OUT +PWVs +Vs C9 100nF C8 1000 µF -Vs +Vs C7 100nF C6 1000 µF BUFFER DRIVER 11 BOOT LOADER 12 5 CLIP DET 5 MASTER SLAVE C10 100nF R7 2 Ω VMUTE VSTBY STBY Figure 6: Modular Application Circuit TDA7296S 8/11 |
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