Document Number: 91128

www.vishay.com

S-81393-Rev. A, 07-Jul-08

1

Power MOSFET

IRFD120, SiHFD120

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• For Automatic Insertion

• End Stackable

• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable case

style which can be stacked in multiple combinations on

standard 0.1" pin centers. The dual drain serves as a thermal

link to the mounting surface for power dissipation levels up to

1 W.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

100

0.27

16

4.4

7.7

Configuration

Single

N-Channel MOSFET

G

D

S

HEXDIP

D

S

G

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

HEXDIP

Lead (Pb)-free

IRFD120PbF

SiHFD120-E3

SnPb

IRFD120

SiHFD120

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

100

V

Gate-Source Voltage

± 20

Continuous Drain Current

1.3

A

0.94

10

Linear Derating Factor

0.0083

W/°C

100

mJ

1.3

A

0.13

mJ

Maximum Power Dissipation

1.3

W

dV/dt

5.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature)

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply